MX29F200TTI-12中文資料????????????旺宏數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The MX29F200T/B is a 2-mega bit, single 5 Volt Flash memory organized as 1M word x16 or 2M bytex8 MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F200T/B is packaged in 44-pin SOP and 48- pin TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

FEATURES

? 5.0V±10 for read, erase and write operation

? 131072x16/262144x8 switchable

? Fast access time: 55/70/90/120ns

? Low power consumption

- 40mA maximum active current@5MHz

- 1uA typical standby current

? Command register architecture

- Byte/Word Programming (7us/12us typical)

- Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and

64K-Byte x3)

? Auto Erase (chip) and Auto Program

- Automatically erase any combination of sectors or

the whole chip with Erase Suspend capability.

- Automatically program and verify data at specified

address

? Status Reply

- Data polling & Toggle bit for detection of program

and erase cycle completion.

? Ready/Busy pin(RY/BY)

- Provides a hardware method or detecting program

or erase cycle completion

? Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

- Superior inadvertent write protection

? Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Sector protect/unprotect for 5V only system or 5V/

12V system

? 100,000 minimum erase/program cycles

? Latch-up protected to 100mA from -1V to VCC+1V

? Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

? Low VCC write inhibit is equal to or less than 3.2V

? Package type:

- 44-pin SOP

- 48-pin TSOP

? Erase suspend/ Erase Resume

- Suspends an erase operation to read data from, or

program data to a sector that is not being erased, then

resume the erase operation.

? Hardware RESET pin

- Resets internal state mechine to the read mode

? 20 years data retention