MX30LF4G18AC集成電路（IC）的存儲器規(guī)格書PDF中文資料

1. FEATURES

? 2G/4G-bit SLC NAND Flash

- Bus: x8

- Page size: (2048+64) byte,

- Block size: (128K+4K) byte,

- Plane size:

1024-block/plane x 2 for 2Gb

2048-block/plane x 2 for 4Gb

? ONFI 1.0 compliant

? Multiplexed Command/Address/Data

? User Redundancy

- 64-byte attached to each page

? Fast Read Access

- Latency of array to register: 25us

- Sequential read: 20ns

? Cache Read Support

? Page Program Operation

- Page program time: 300us( typ.)

? Cache Program Support

? Block Erase Operation

- Block erase time: 1ms (typ.)

? Single Voltage Operation:

- VCC: 2.7 ~ 3.6V

? Low Power Dissipation

- Max. 30mA

Active current (Read/Program/Erase)

? Sleep Mode

- 50uA (Max) standby current

? Hardware Data Protection: WP# pin

? Block Protection

- PT (Protection) pin: active high at power-on,

which protects the entire chip. The pin has an

internal weak pull down.

- Temporary protection/un-protection function

(enabling by PT pin)

- Solid protection

(enabling by PT pin)

? Device Status Indicators

- Ready/Busy (R/B#) pin

- Status Register

? Chip Enable Don't Care

- Simplify System Interface

? Unique ID Read support (ONFI)

? Secure OTP support

? High Reliability

- Endurance: typical 100K cycles (with 4-bit ECC

per (512+16) Byte)

- Data Retention: 10 years

? Wide Temperature Operating Range

-40°C to +85°C

? Package:

1) 48-TSOP(I) (12mm x 20mm)

2) 63-ball 9mmx11mm VFBGA

All packaged devices are RoHS Compliant and

Halogen-free.