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BD49L50G-TR

Marking:Nb;Package:SSOP3;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD49L50G-TR

Marking:Nb;Package:SSOP3;High accuracy detection, Ultra-low current consumption

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD49L50G-TR

Marking:Nb;Package:SSOP3;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD49L50G-TR

Marking:Nb;Package:SSOP3;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD49L50G-TR

Marking:Nb;Package:SSOP3;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BF599

Marking:NB;Package:SOT-23;NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion)

NPNSiliconRFTransistor ●CommonemitterIF/RFamplifier ●Lowfeedbackcapacitanceduetoshielddiffusion

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

ESD80V12D-C

Marking:NB;Package:SOD-123;Transient Voltage Suppressors for ESD Protection

Features 1000WattsPeakPulsePowerperLine(tp=8/20μs) 200WattsPeakPulsePowerperLine(tp=10/1000μs) ProtectsoneI/Olineorpowerline Lowclampingvoltage Workingvoltages:5Vto190V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact) IEC61000-4-4(EFT)80A(5/

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

FMMTA55R

Marking:NB;Package:SOT-23;SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES *Gainof50atIC=100mA

Zetex

Zetex Semiconductors

KDZ6.2B

Marking:NB;Package:SOD-123;Zener diode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

羅姆羅姆半導(dǎo)體集團

KDZ6.2B

Marking:NB;Package:SOD-123;Zener diode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

羅姆羅姆半導(dǎo)體集團

替換型號

晶體管資料

  • 型號:

    NB011E

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    通用型 (Uni)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    40V

  • 最大電流允許值:

    0.03A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BC546,3DG180H,

  • 最大耗散功率:

    0.6W

  • 放大倍數(shù):

  • 圖片代號:

    A-31

  • vtest:

    40

  • htest:

    999900

  • atest:

    0.03

  • wtest:

    0.6

詳細參數(shù)

  • 型號:

    NB

  • 制造商:

    L-com Inc

  • 功能描述:

    FRP 18X16X8 120V FAN/HEAT SS

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更多NB供應(yīng)商 更新時間2025-4-24 11:00:00