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UPA2762UGR

MOSFIELDEFFECTTRANSISTOR

Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

3V,WIDEBANDMEDIUMPOWERSIMMICAMPLIFIER

DESCRIPTION TheUPC2762TandUPC2763TareSiliconMonolithicintegratedcircuitswhicharemanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Theseamplifiersweredesignedfor900MHzand1.9GHzreceiversincellular,cordlessteleph

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    NB2762A

  • 制造商：

    ONSEMI

  • 制造商全稱：

    ON Semiconductor

  • 功能描述：

    Low Power, Reduced EMI Clock Synthesizer

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
24+
TSOP-6
4897
絕對原裝!現(xiàn)貨熱賣!
 詢價
ON
23+
SOT23-6
5000
原裝正品,假一罰十
 詢價
ON
23+
SOT23-6
200
全新原裝正品
 詢價
ON
24+
SOT23-6
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
ON
2020+
SOT23-6
35000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價
ON
24+
SOT23-6
2987
絕對全新原裝現(xiàn)貨供應(yīng)!
 詢價
ON
6000
面議
19
SOT23-6
 詢價
ON Semiconductor
24+
6-TSOP
56200
一級代理/放心采購
 詢價
ON
24+
TSOT-6
7194
優(yōu)勢現(xiàn)貨
 詢價
ON
20+
TSOP-6
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多NB2762A供應(yīng)商 更新時間2025-4-25 15:52:00

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