NCE12P09S

Marking：NCE12P09S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE12P09Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-12V,ID=-9A RDS(ON)

NCE14P40K

Marking：NCE14P40K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE14P40Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-40V,ID=-30A RDS(ON)=11mΩ@VGS=-10V(Typ) RDS(ON)=15mΩ@VGS=-4.5V(Typ)

NCE1504R

Marking：NCE1504R；Package：SOT-223-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE1504Rusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=150V,ID=4A RDS(ON)

NCE1507AK

Marking：NCE1507AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE1507AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=150V,ID=7A RDS(ON)

NCE1540AD

Marking：NCE1540AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE1540ADusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=150V,ID=40A RDS(ON)

NCE1540AF

Marking：NCE1540AF；Package：TO-220F；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE1540AFusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=150V,ID=20A RDS(ON)

NCE1550F

Marking：NCE1550F；Package：TO-220F；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE1550Fusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. GeneralFeatures ●VDS=150V,ID=50A RDS(ON)

NCE1570

Marking：NCE1570；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE1570usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbeused inawidevarietyofapplications. GeneralFeatures ●VDS=150V,ID=70A RDS(ON)

NCE15P25I

Marking：NCE15P25I；Package：TO-251；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE15P25JIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. GeneralFeatures ●VDS=-150V,ID=-25A RDS(ON)

NCE15P25J

Marking：NCE15P25J；Package：TO-220-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE15P25Jusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. GeneralFeatures ●VDS=-150V,ID=-25A RDS(ON)