NDP610BE中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
NDP610BE規(guī)格書詳情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in2) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
產(chǎn)品屬性
- 型號(hào)：
NDP610BE
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
F |
23+ |
TO-220AB |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Fairchild |
24+ |
TO-220AB |
707 |
詢價(jià) | |||
FSC/NS |
2310+ |
3866 |
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價(jià) | |||
ON |
23+ |
TO-220 |
35890 |
詢價(jià) | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
KA |
6000 |
面議 |
19 |
TO-220 |
詢價(jià) | ||
FSC |
23+ |
TO-220 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
VBsemi |
22+23+ |
TO220 |
8000 |
新到現(xiàn)貨，只做原裝進(jìn)口 |
詢價(jià) | ||
FSC |
23+ |
TO-220 |
8820 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
Fairchild仙童 |
22+ |
TO-220AB |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) |
