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RFD3055SM

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFP3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFP3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP3055

12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs)

Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor

HARRIS

Harris Corporation

RFP3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFP3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP3055LE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

RFT3055

2.0A,60V,0.150Ohm,N-Channel,LogicLevel,ESDRated,PowerMOSFET

ThisproductisanN-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulato

Intersil

Intersil Corporation

詳細參數(shù)

  • 型號：

    NDT3055

  • 功能描述：

    MOSFET SOT-223 N-CH ENHANCE

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ON
22+
SMD
1980
新到現(xiàn)貨 絕對正品原裝
 詢價
FAIRCHILD/仙童
25+
SOT-223
154399
明嘉萊只做原裝正品現(xiàn)貨
 詢價
onsemi
24+
SOT-223-4
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
FAIRCHILD
SOT223
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
ON/安森美
2019+
SOT-223
78550
原廠渠道 可含稅出貨
 詢價
FSC
24+
SOT-223
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
ON&FAIRC
1610+
SOT223
70
全新原裝公司現(xiàn)貨
詢價
FAIRCHILD/仙童
24+
SOT-223
373
只做原廠渠道 可追溯貨源
 詢價
ON&FAIRC
23+
SOT223
70
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
FAIRCHILD/仙童
23+
SOT223
29600
一級分銷商!
 詢價
更多NDT3055供應商 更新時間2025-4-26 11:45:00

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