NE1280中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

K-BAND MEDIUM POWER AMPLIFIE

N-CHANNEL HJ-FET CHIPS

DESCRIPTION

The NE1280 series is medium power HJ-FET chips

which offer high output power and high gain for telecom

transmit power amplifier applications to 30 GHz.

NE1280100 is one cell die of 450 mm gate width,

offering 0.1 W output power. NE1280200 is two cells of

900 mm gate width, offering 0.2 W output power.

NE1280400 is four cells of 1.8 mm gate width, offering

0.4 W output power.

The devices incorporate WSi/Au gate to get high gain

and silicon nitride glassivation for superior scratch resistance

and mechanical protection.

Via hole source grounding result in superior RF

performance. To reduce the thermal resistance, the

devices have a PHS. (Plated Heat Sink)

NEC’s strigent quality assurance and test procedures

assure the highest reliability and performance.

FEATURES

? Class A operation

? High power output

? High liniar gain

? High reliability