NE5520279A-T1A中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書

3.2 V OPERATION SILICON RF POWER LDMOS FET

FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the

transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

(our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0

dBm output power with 45 power added efficiency at 1.8 GHz under the 3.2 V supply voltage.

FEATURES

? High output power : Pout = 32.0 dBm TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)

? High power added efficiency : ηadd = 45 TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)

? High linear gain : GL = 10 dB TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 5 dBm)

? Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.

? Single supply : VDS = 2.8 to 6.0 V