NE5520379A分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

3.2 V OPERATION SILICON RF POWER LDMOS FET

FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a surface mount

package. This device can deliver 34.6 dBm output power with 68 power efficiency at 915 MHz under the 2.8 V

supply voltage.

FEATURES

? High output power : Pout = 35.5 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm)

: Pout = 33.0 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm)

? High power added efficiency : ηadd = 65 TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm)

: ηadd = 35 TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm)

? High linear gain : GL = 16.0 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 10 dBm)

: GL = 8.5 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 10 dBm)

? Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.

? Single supply : VDS = 2.8 to 6.0 V