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NESG210719

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES ?IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS ?HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR ?3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG210719

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Labs

NESG210719-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719-T1

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES ?IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS ?HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR ?3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG210719-T1

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719-T1-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Labs

NESG210719-T1

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Labs

NESG210719-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào)：

    NESG210719

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS
23+
SC-90
63000
原裝正品現(xiàn)貨
 詢價(jià)
NEC
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
NEC
21+
SOT-23
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
RENESAS/瑞薩
23+
SOT-523
27000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
NEC
24+
NA/
6250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
 詢價(jià)
NEC
24+
SOT-23
60000
詢價(jià)
CEL
24+
原廠原裝
5000
原裝正品
 詢價(jià)
CEL
19+
SOT-523
200000
詢價(jià)
CEL
20+
SOT-523
36800
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
RENESAS/瑞薩
24+
SOT-523
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
 詢價(jià)
更多NESG210719供應(yīng)商 更新時(shí)間2025-4-26 14:30:00

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