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NP109N04PUG

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) ?HighcurrentratingID(DC)=±110A

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP109N04PUG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP109N04PUG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N04PUG-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) ?HighcurrentratingID(DC)=±110A

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP109N04PUG-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) ?HighcurrentratingID(DC)=±110A

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP109N04PUG_15

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N04PUG-E1-AYNote

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N04PUG-E2-AYNote

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N04PUJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP109N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) ?Lowinputcapacitance Ciss=6900pFTYP. ?Designedforautomotiveapplicati

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP109N04PUJ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP109N04PUG

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
TO-252
8866
詢價(jià)
NEC
23+
TO-252
11712
全新原裝
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NEC
6000
面議
19
TO-252
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UBIQ
23+
SOP-8
69820
終端可以免費(fèi)供樣,支持BOM配單!
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NEC
21+
TO-263
30000
只做正品原裝現(xiàn)貨
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VBsemi
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
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VB
21+
TO263
10000
原裝現(xiàn)貨假一罰十
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RENESAS/瑞薩
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
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R
23+
TO263
6000
原裝正品，支持實(shí)單
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VBsemi
21+
TO263
10010
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
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更多NP109N04PUG供應(yīng)商 更新時(shí)間2025-2-19 15:30:00

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