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NP50P04KDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP50P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=10mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=15mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP50P04SDG-E1-AY

P-channel Enhancement Mode Power MOSFET

Features VDS=-40V,ID=-13A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

NP50P04SLG

MOS FIELD EFFECT TRANSISTOR

Description TheNP50P04SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=9.6mΩMAX.(VGS=?10V,ID=?25A) ?RDS(on)2=15mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P04SLG

P-Channel 40 V (D-S) MOSFET

FEATURES ?TrenchFET?powerMOSFET ?Packagewithlowthermalresistance ?100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

NP50P04SLG-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP50P04SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=9.6mΩMAX.(VGS=?10V,ID=?25A) ?RDS(on)2=15mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P04SLG-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP50P04SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=9.6mΩMAX.(VGS=?10V,ID=?25A) ?RDS(on)2=15mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P06KDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP50P06KDG

-60V – -50A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=17m?Max.(VGS=-10V,ID=-25A) RDS(on)=23m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss=50

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P06KDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP50P06KDG-E1-AY

-60V – -50A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=17m?Max.(VGS=-10V,ID=-25A) RDS(on)=23m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss=50

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    NP5

  • 制造商：

    AB

  • 功能描述：

    POT5K ALLEN BRADLEY S7D7B

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24+
3000
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24+
BGA
2978
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時可發(fā)貨
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RENESAS
17+
TO-252
6200
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MMCNETEORKS
24+
12
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NEC
1415+
TO-252
28500
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NEC
23+
TO-252
11750
全新原裝
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N
24+
TO252
5000
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NPL
17+
MQFP
9800
只做全新進口原裝,現(xiàn)貨庫存
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NPL
1998
MQFP
130
原裝現(xiàn)貨海量庫存歡迎咨詢
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Renesas
19+
TO-252
87454
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更多NP5供應(yīng)商 更新時間2025-4-12 10:20:00

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