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NP89N04MUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP89N04MUK-S18-AY

MOS FIELD EFFECT TRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.3m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04NUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP89N04NUK-S18-AY

MOS FIELD EFFECT TRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.3m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PDK

40 V – 90 A – N-channel Power MOS FET Application: Automotive

Description TheNP89N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PDK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.95mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP89N04PDK-E1-AY

40 V – 90 A – N-channel Power MOS FET Application: Automotive

Description TheNP89N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PDK-E2-AY

40 V – 90 A – N-channel Power MOS FET Application: Automotive

Description TheNP89N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP89N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP89N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    NP8

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
Renesas
21+
-
50
全新原裝鄙視假貨
 詢價
RENESAS/瑞薩
23+
NA
33000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
RENESAS/瑞薩
TO-263
22+
56000
全新原裝進口,假一罰十
 詢價
NEC
24+
TO-263
8866
詢價
NEC
23+
TO-263
11837
全新原裝
 詢價
NEC
6000
面議
19
TO-263
 詢價
AVAGO/安華高
23+
SOP-8
69820
終端可以免費供樣,支持BOM配單!
 詢價
VBsemi
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VB
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價
R
TO-263
22+
6000
十年配單,只做原裝
 詢價
更多NP8供應(yīng)商 更新時間2025-4-23 17:50:00

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