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NP80N055

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055CHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055CHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055CLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055CLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2900

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2900

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055DHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    NP80N055

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-262
5000
只做原裝公司現(xiàn)貨
 詢價
NEC
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
TO-262
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
NEC
23+
NA/
2000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
NEC
23+
TO-252
9500
專業(yè)優(yōu)勢供應(yīng)
 詢價
NEC
2016+
TO263
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
NEC
24+
TO-263
8866
詢價
R
23+
TO263
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
RENESAS/瑞薩
13+
TO263
28744
進口原盤現(xiàn)貨/800
 詢價
NEC
6000
面議
19
TO-220AB
 詢價
更多NP80N055供應(yīng)商 更新時間2025-2-14 10:20:00

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