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NP80N055NDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N055MDG,NP80N055NDG,andNP80N055PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance -NP80N055MDG,NP80N055NDG RDS(on)1=6.9mΩMAX.(VGS=10V,ID=40A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055NDG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055NDG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N055MDG,NP80N055NDG,andNP80N055PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance -NP80N055MDG,NP80N055NDG RDS(on)1=6.9mΩMAX.(VGS=10V,ID=40A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055NDG-S18-AYNote

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055NHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055NHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N055NHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055NHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055NLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055NLE

SWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號：

    NP80N055NDG

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
23+
PG-TO263
69820
終端可以免費供樣,支持BOM配單!
 詢價
RENESAS/瑞薩
23+
TO-262
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
RENESAS/瑞薩
22+
TO-262
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
22+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
Renesas
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
 詢價
Renesas
23+
TO2623 Long Leads I2Pak TO262A
9000
原裝正品，支持實單
 詢價
Renesas Electronics America
2022+
TO-262-3,長引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
RENESASELECTRONICSAMERICA
23+
TO-262
33000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
RENESAS/瑞薩
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價
更多NP80N055NDG供應商 更新時間2025-4-26 11:10:00

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