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NP82N055CHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055CHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N055CHE

MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055CHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) ?Lowinputcapacitance Ciss=3500pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N055CHE_07

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055CLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N055CLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP82N055CLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) ?Lowinputcapacitance Ciss=4

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP82N055CHE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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NEC
24+
TO-220AB
8866
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NEC
6000
面議
19
TO-220AB
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NEC
2023+
TO-220AB
80000
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TECCOR/LITT
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
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R
23+
TO-220AB
10000
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VB
21+
TO-220AB
10000
原裝現(xiàn)貨假一罰十
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NEC
2022+
TO-220AB
12888
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VB
TO-220AB
68900
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NEC
22+
T0-220
3000
原裝正品,支持實(shí)單
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NEC
2023+
T0-220
3785
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
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更多NP82N055CHE供應(yīng)商 更新時(shí)間2025-2-15 15:30:00

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