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NP88N055CLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N055CLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) ?Lowinputcapacitance Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N055CLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP88N055CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N055CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) ?Lowinputcapacitance Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N055DHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP88N055DHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N055DHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=5.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N055DLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N055DLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=5.2mΩMAX.(VGS=10V,ID=44A) RDS(on)2=6.3mΩMAX.(VGS=5.0V,ID=44A) RDS(on)3=6.8mΩMAX.(VGS=4.5V,ID=44A) ?Lowinputcapacitance Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NP88N055CLE

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 88A I(D) | TO-220AB

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
17+
TO-220
31518
原裝正品 可含稅交易
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NEC
24+
TO-220AB
8866
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NEC
23+
TO-220AB
12158
全新原裝
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日本NEC
1822+
TO220
9852
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
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NEC
6000
面議
19
TO-220AB
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日本NEC
18+
TO220
41200
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NEC
23+
TO-220
6000
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NEC
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
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R
25+
TO-TO-220
37650
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NEC
22+
T0-220
3000
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更多NP88N055CLE供應(yīng)商 更新時(shí)間2025-4-26 14:00:00