NRVBD1035VCTLT4G分立半導體產品的二極管-整流器-單規(guī)格書PDF中文資料

NRVBD1035VCTLT4G屬于分立半導體產品的二極管-整流器-單。由安森美半導體公司制造生產的NRVBD1035VCTLT4G二極管 - 整流器 - 單單整流器二極管系列產品可用于讓電流僅沿一個方向流動，并且每個器件封裝都恰好實現該功能的一個實例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨列在各自的產品系列中，每個器件封裝中包含多個二極管的產品也是如此。

The MBRD1035CTL employs the Schottky Barrier principle in a

large area metal?to?silicon power diode. State of the art geometry

features epitaxial construction with oxide passivation and metal

overlay contact. Ideally suited for low voltage, high frequency

switching power supplies, free wheeling diode and polarity protection diodes.

Features

? Highly Stable Oxide Passivated Junction

? Guardring for Stress Protection

? Matched Dual Die Construction ?

May be Paralleled for High Current Output

? High dv/dt Capability

? Short Heat Sink Tap Manufactured ? Not Sheared

? Very Low Forward Voltage Drop

? Epoxy Meets UL 94 V?0 @ 0.125 in

? SBRD8 and NRVBD Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC?Q101 Qualified and PPAP Capable

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

Mechanical Characteristics:

? Case: Epoxy, Molded

? Weight: 0.4 Gram (Approximately)

? Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

? Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

? ESD Rating:

? Human Body Model = 3B (> 8 kV)

? Machine Model = C (> 400 V)