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NTB10N40

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTB10N40

N??hannel Power MOSFET

10AMPERES400VOLTSRDS(on)=500m? Designedforhighvoltage,highspeedswitchingapplicationsinpowersupplies,converters,powermotorcontrolsandbridgecircuits. Features ?HigherCurrentRating ?LowerRDS(on) ?LowerCapacitances ?LowerTotalGateCharge ?Tig

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB10N40T4

N??hannel Power MOSFET

10AMPERES400VOLTSRDS(on)=500m? Designedforhighvoltage,highspeedswitchingapplicationsinpowersupplies,converters,powermotorcontrolsandbridgecircuits. Features ?HigherCurrentRating ?LowerRDS(on) ?LowerCapacitances ?LowerTotalGateCharge ?Tig

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB125N02R

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=120.5A@TC=25℃ ·DrainSourceVoltage-VDSS=24V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTB13N10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.165Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTB150N65

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTB15N40

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTB18N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTB18N06L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTB18N06L

Power MOSFET 15 Amps, 60 Volts, Logic Level (N??hannel TO??20 and DPAK)

PowerMOSFET15Amps,60Volts,LogicLevel N?ChannelTO?220andD2PAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features ?Pb?FreePackagesareAvailable TypicalApplications ?PowerSupplies ?Co

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    NTB

  • 功能描述：

    MOSFET 24V 125A N-Channel

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
TO-263
35890
詢價
ONSEMICONDUCTOR
24+
570
詢價
ON
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
ONSEMICONDU
24+
原裝進(jìn)口原廠原包接受訂貨
2866
原裝現(xiàn)貨假一罰十
 詢價
ON
23+
TO-263-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ON
24+
TO-263
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理
 詢價
ON
6000
面議
19
DIP/SMD
 詢價
ON/安森美
23+
SOT-263
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
ON
1709+
SOT-263
32500
普通
 詢價
ON/安森美
2447
D2PAK
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
更多NTB供應(yīng)商 更新時間2025-4-21 17:12:00

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