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NTD3055L104

12 Amps, 60 Volts, Logic Level N?Channel DPAK

Features ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecification ?LowerDiodeReverseRecoveryTime ?LowerReverseRecoveryStoredCharge ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?Converters ?PowerMotorControls ?BridgeCircuit

ETCList of Unclassifed Manufacturers

未分類制造商

NTD3055L104

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=104mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTD3055L104

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN?ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features ?Pb?FreePackagesareAvailable ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecifica

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD3055L104-1

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN?ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features ?Pb?FreePackagesareAvailable ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecifica

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD3055L104-1

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=104mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTD3055L104-1G

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN?ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features ?Pb?FreePackagesareAvailable ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecifica

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD3055L104-1G

12 Amps, 60 Volts, Logic Level N?Channel DPAK

Features ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecification ?LowerDiodeReverseRecoveryTime ?LowerReverseRecoveryStoredCharge ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?Converters ?PowerMotorControls ?BridgeCircuit

ETCList of Unclassifed Manufacturers

未分類制造商

NTD3055L104G

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN?ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features ?Pb?FreePackagesareAvailable ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecifica

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTD3055L104G

12 Amps, 60 Volts, Logic Level N?Channel DPAK

Features ?LowerRDS(on) ?LowerVDS(on) ?TighterVSDSpecification ?LowerDiodeReverseRecoveryTime ?LowerReverseRecoveryStoredCharge ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?Converters ?PowerMotorControls ?BridgeCircuit

ETCList of Unclassifed Manufacturers

未分類制造商

NTD3055L104G

N-channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號：

    NTD3055L

  • 功能描述：

    MOSFET 60V 12A N-Channel

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
24+
DPAK
20000
只做原廠渠道 可追溯貨源
 詢價
ON/安森美
17+
DPAK-4IPAK-4
31518
原裝正品 可含稅交易
 詢價
ON/安森美
新年份
TO252
6000
詢價
ON
23+
DPAK-3
5000
原裝正品,假一罰十
 詢價
ON
24+
DPAK4LEADSingleG
8866
詢價
ON
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ONS
24+
TO-252
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理
 詢價
ON
6000
面議
19
DIP/SMD
 詢價
ON/安森美
22+
TO252
20449
原裝正品現(xiàn)貨
 詢價
ON
23+
65480
詢價
更多NTD3055L供應(yīng)商 更新時間2025-2-14 16:36:00

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