NTE2407中文資料NTE數(shù)據(jù)手冊PDF規(guī)格書

Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406)

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA

Total Device Dissipation (FR–5 Board, Note 1), PD . . . . . . . . . 225mW

Derate above +25°C. . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . 1.8mW/ °C

Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), RthJA . . . . . . . 556°C/W

Total Device Dissipation (Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . .. . . 300mW

Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C

Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), RthJA .. . . 417°C/W

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . –55 ° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C