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NTE2540

Silicon NPN Transistor Darlington, High Voltage Switch

Features: ?HighDCCurrentGain:hFE=600Min(VCE=2V,IC=2A) ?MonolithicConstructionw/Built–InBase–EmitterShuntResistor

NTE

NTE Electronics

PBSS2540E

40V,500mANPNlowVCEsat(BISS)transistor

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS2540E

40V,500mANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS2540F

40VlowVNPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSC-89(SOT490)plasticpackage. PNPcomplement:PBSS3540F. FEATURES ?Lowcollector-emittersaturationvoltage ?Highcurrentcapability ?Improvedthermalbehaviourduetoflatleads ?EnhancedperformanceoverSOT23generalpurposetransistors.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS2540M

40V,0.5ANPNlowVCEsat(BISS)transistor

DESCRIPTION LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. FEATURES ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiencyleadingtoreducedheatgeneration ?Reducedprinted

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS2540M

40V,0.5ANPNlowVCEsat(BISS)transistor

DESCRIPTION LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. FEATURES ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiencyleadingtoreducedheatgeneration ?Reducedprinted

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS2540M

40V,0.5ANPNlowVCEsat(BISS)transistor

1.Generaldescription LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiencyleadingtoreducedheat

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS2540MB

40V,0.5ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS3540MB. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■Lowpackageheight

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBYR2540CT

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dual,commoncathodeschottkyrectifierdiodesinaconventionalleadedplasticpackageandasurfacemountingplasticpackage.Intendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. ThePBYR2545CTseriesissuppliedintheSOT7

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBYR2540CTB

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dual,commoncathodeschottkyrectifierdiodesinaconventionalleadedplasticpackageandasurfacemountingplasticpackage.Intendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. ThePBYR2545CTseriesissuppliedintheSOT7

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號：

    NTE2540

  • 制造商：

    NTE Electronics

  • 功能描述：

    TRANSISTORBJTDARLINGTON ((NW))

  • 功能描述：

    T-NPN-SI DARLINGTON

  • 功能描述：

    TRANSISTOR, BIPOLAR, NPN, 400V, 6A, TO-220-3; Transistor

  • Polarity：

    NPN; Collector Emitter Voltage

  • V(br)ceo：

    400V; Power Dissipation

  • Pd：

    25W; DC Collector

  • Current：

    6A; DC Current Gain

  • hFE：

    100; Operating Temperature

  • Max：

    150C ;RoHS

  • Compliant：

    Yes

  • 功能描述：

    Trans Darlington NPN 400V 6A 3-Pin(3+Tab) TO-220 Isolated

供應商型號品牌批號封裝庫存備注價格
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
新
5
全新原裝 貨期兩周
 詢價
NTE
23+
65480
詢價
2022+
1
全新原裝 貨期兩周
 詢價
NTE
23+
39300
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ON
24+
SOT252
5000
只做原裝公司現(xiàn)貨
 詢價
ON/安森美
2447
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ON/安森美
23+
SOT252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON/安森美
21+
SOT252
10000
原裝現(xiàn)貨假一罰十
 詢價
ON/安森美
SOT252
22+
6000
十年配單,只做原裝
 詢價
更多NTE2540供應商 更新時間2025-4-26 11:06:00

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