NTE56050中文資料NTE數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description:

The NTE56049 and NTE56050 are glass passivated, Low Logic Level TRIACs in a TO220 type package designed for usein general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits, and other low power gate trigger circuits.

Absolute Maximum Ratings:

Repetitive Peak Off–Sate Voltage (Note 1), VDRM

NTE56049 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

NTE56050 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

RMS On–State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) . . . . . . . . .4A

Non–Repetitive Peak On–State Current, ITSM

(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)

t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A

t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A

I2t for Fusing (t = 10ms), I2t 3.1A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2sec

Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt

(ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/μs)

MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ μs

MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50A/ μs

MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50A/ μs

MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10A/ μs

Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W

Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . 500mW

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Thermal Resistance, Junction–to–Mounting Base, RthJMB

Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W

Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W

Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . 60K/W