NTE6232中文資料NTE數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description:

The NTE6232 uses 2 power diodes in series and the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required.

Features:

Standard Voltage

Electrically Isolated Base Plate

3500VRMS Isolating Voltage

High Surge Capability

Large Creepage Distances

Ratings and Characteristics:

Average Forward Current (TC = +92°C, 180° Conduction, Half Sine Wave), IF(AV) . . . . . . . . . . 100A

Maximum RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A

Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, VRRM, VDRM . . . . . . . . 1600V

Maximum Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . 1700V

Maximum Peak Reverse Current (TJ = +125°C), IRRM . . . . . . . . . . . . . . . . . . . . . . . 10mA

RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3500V

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Thermal Resistance, Junction–to–Case (Per Module, DC Operation), RthJC . . . . . . . . . . . 0.22°C/W

Thermal Resistance, Case–to–Sink (Note 1), RthCS . . . . . . . . . . . . .. . . . . . . . . 0.1°C/W