NTE912中文資料NTE數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description:

The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic substrate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differentially–connected pair.

The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec trical and thermal matching.

Features:

● Two Matched Pairs of Transistors:

VBE matched ±5mV

Input Offset Current 2μA Max. @ IC = 1mA

● 5 General Purpose Monolithic Transistors

● Operation from DC to 120MHz

● Wide Operating Current Range

● Low Noise Figure: 3.2dB Typ @ 1kHz

Applications:

● General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency Range from DC to VHF

● Custom Designed Differential Amplifiers

● Temperature Compensated Amplifiers