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NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L160N120SC1

MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L160N120SC1_V01

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L160N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVH4L160N120SC1

SiliconCarbide(SiC)MOSFET–160mohm,1200V,M1,TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVH4L160N120SC1

MOSFET-SiCPower,SingleN-Channel,TO247-4L1200V,160m,17.3A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON
23+
TO-247-4
100000
全新原裝
 詢價(jià)
onsemi
24+
TO-247-4L
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
onsemi(安森美)
23+
TO-247-4
8110
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ON
24+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
 詢價(jià)
ON2
23+
原廠原封
450
訂貨1周 原裝正品
 詢價(jià)
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
onsemi
23+
TO-247-4
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價(jià)
ONSEMI
23+
MOSFET
5864
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低
 詢價(jià)
ON Semiconductor
23+/22+
859
原裝進(jìn)口訂貨7-10個(gè)工作日
 詢價(jià)
更多NTH4L160N120SC1供應(yīng)商 更新時(shí)間2024-11-28 16:20:00

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