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NTMD3N08LR2

Power MOSFET 2.3 Amps, 80 Volts

PowerMOSFET2.3Amps,80Volts N?ChannelEnhancement?ModeSO?8DualPackage Features ?UltraLowOn?ResistanceProvidesHigherEfficiency ?RDS(on)=0.215Ω,VGS=10V ?RDS(on)=0.245Ω,VGS=5.0V ?LowReverseRecoveryLosses ?InternalRG=50Ω ?DesignedforPowerManagement

ONSEMION Semiconductor

安森美半導體安森美半導體公司

CDA3N08-G

SteeringDiodeArrays-ESDSuppressors

Features ?(16kV)IEC61000-4-2capable ?FastReverseRecoveryTime ?FastTurnonTime ?LowCapacitance ?SMDPackages Applications ?SignalTermination ?SignalConditioning ?ESDSuppression ?TransientSuppression

COMCHIPComchip Technology

典琦典琦科技股份有限公司

DN3N08TTE

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

DN3N08TTE

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

DN3N08TTEB

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

DN3N08TTEB

diodeterminatornetwork

KOA

KOA SPEER ELECTRONICS, INC.

MTD3N08LD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD3N08LI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,po

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP3N08L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

RFD3N08

3A,80V,0.800Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD3N08LandRFD3N08LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

詳細參數(shù)

  • 型號:

    NTMD3N08L

  • 功能描述:

    MOSFET 80V 2.3A N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多NTMD3N08L供應商 更新時間2025-4-27 9:16:00