NV25010DWVLT3G集成電路（IC）的存儲器規(guī)格書PDF中文資料

NV25010DWVLT3G屬于集成電路（IC）的存儲器。由安森美半導(dǎo)體公司制造生產(chǎn)的NV25010DWVLT3G存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

NV25010LV, NV25020LV and NV25040LV are EEPROM Serial

1/2/4?Kb SPI Low Voltage Automotive Grade 1 devices internally

organized as 128x8, 256x8 and 512x8 bits. They feature a 16?byte

page write buffer and support the Serial Peripheral Interface (SPI)

protocol. The devices are enabled through a Chip Select (CS) input. In

addition, the required bus signals are clock input (SCK), data input

(SI) and data output (SO) lines. The HOLD input may be used to pause

any serial communication with the NV250x0 device. The device

features software and hardware write protection, including partial as

well as full array protection. Byte Level On?Chip ECC (Error

Correction Code) makes the device suitable for high reliability

applications. The device offers an additional Identification Page which

can be permanently write protected.

Features

? Automotive AEC?Q100 Grade 1 (?40°C to +125°C) Qualified

? 1.7 V to 5.5 V Supply Voltage Range

? 20 / 10 MHz SPI Compatible

? SPI Modes (0,0) & (1,1)

? 16?byte Page Write Buffer

? Self?timed Write Cycle

? Hardware and Software Protection

? Additional Identification Page with Permanent Write Protection

? NV Prefix for Automotive and Other Applications Requiring Site and

Change Control

? Block Write Protection

? Protect 1/4, 1/2 or Entire EEPROM Array

? Low Power CMOS Technology

? Program/Erase Cycles:

? 4,000,000 at 25°C

? 1,200,000 at +85°C

? 600,000 at +125°C

? 200 Year Data Retention

? SOIC, TSSOP, US 8?lead & Wettable Flank UDFN 8?pad Packages

? This Device is Pb?Free, Halogen Free/BFR Free, and RoHS

Compliant