NV25256DWHFT3G集成電路（IC）的存儲器規(guī)格書PDF中文資料

NV25256DWHFT3G屬于集成電路（IC）的存儲器。由安森美半導(dǎo)體公司制造生產(chǎn)的NV25256DWHFT3G存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

NV25128, NV25256 are EEPROM Serial 128/256 kb SPI

Automotive Grade 0 devices internally organized as 16K/32Kx8 bits.

It features a 64?byte page write buffer and supports the Serial

Peripheral Interface (SPI) protocol. The device is enabled through a

Chip Select (CS) input. In addition, the required bus signals are clock

input (SCK), data input (SI) and data output (SO) lines. The HOLD

input may be used to pause any serial communication with the

NV25xxx device. The device features software and hardware write

protection, including partial as well as full array protection. Byte

Level On?Chip ECC (Error Correction Code) makes the device

suitable for high reliability applications. The device offers an

additional Identification Page which can be permanently write

protected.

Features

? Automotive AEC?Q100 Grade 0 (?40°C to +150°C) Qualified

? 2.5 V to 5.5 V Supply Voltage Range

? 10 MHz SPI Compatible

? SPI Modes (0,0) & (1,1)

? 64?byte Page Write Buffer

? Self?timed Write Cycle

? Hardware and Software Protection

? Additional Identification Page with Permanent Write Protection

? NV Prefix for Automotive and Other Applications Requiring Site and

Change Control

? Block Write Protection

? Protect 1/4, 1/2 or Entire EEPROM Array

? Low Power CMOS Technology

? Program/Erase Cycles:

? 4,000,000 at 25°C

? 1,200,000 at +85°C

? 600,000 at +125°C

? 300,000 at +150°C

? 200 Year Data Retention

? SOIC, TSSOP 8?lead Packages

? This Device is Pb?Free, Halogen Free/BFR Free, and RoHS

Compliant