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NVTFS030N06C

MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFS030N06CTAG

Marking：30NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FDI030N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=136A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDI030N06

N-ChannelPowerTrench?MOSFET60V,193A,3.2mW

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDMS030N06B

N-ChannelPowerTrench?MOSFET60V,100A,3m?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP030N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=195A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP030N06

N-ChannelPowerTrench?MOSFET60V,193A,3.2m?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP030N06B

N-ChannelPowerTrench?MOSFET60V,195A,3.1m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NTMFD030N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,29.7m,19A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTTFS030N06C

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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