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NX8561JC

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NX8561JC

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

DESCRIPTION TheNX7660JCisa1625nmnewlydevelopedStrainedMultipleQuantumWell(St-MQW)structurelaserdiodeDIPmodulewithsinglemodefiberandinternalthermoelectriccooler.Itisdesignedforlightsourcesoftelemetryequipment. FEATURES ?OutputpowerPf=5mWMIN.@IF=65mA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NX8561JC

LASER DIODE

1510nmOPTICALFIBERCOMMUNICATIONS InGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE DESCRIPTION TheNX8561JCisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber.The MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelong

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8561JC-BA

LASER DIODE

1510nmOPTICALFIBERCOMMUNICATIONS InGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE DESCRIPTION TheNX8561JCisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber.The MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelong

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8561JC-CA

LASER DIODE

1510nmOPTICALFIBERCOMMUNICATIONS InGaAsPSTRAINEDMQWDC-PBHLASERDIODEMODULE DESCRIPTION TheNX8561JCisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber.The MultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelong

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8561JD

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION TheNX7460LEisa1480nmpumpinglaserdiodemodulewithopticalisolatorforanEDFA(ErDopedopticalFiberAmplifier)thatcanexpandthetransmissionspanandcompensateopticallosses.IthasastrainedMultipleQuantumWell(st-MQW)DC-PBHlaserdiodethatfeatureshighoutput

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NX8562LB

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION TheNX7460LEisa1480nmpumpinglaserdiodemodulewithopticalisolatorforanEDFA(ErDopedopticalFiberAmplifier)thatcanexpandthetransmissionspanandcompensateopticallosses.IthasastrainedMultipleQuantumWell(st-MQW)DC-PBHlaserdiodethatfeatureshighoutput

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NX8562LB

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION TheNX8562LBisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealfortransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=20mWMIN. ?WavelengthselectableforITU-Tstandards

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NX8562LB

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NX8562LB

CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS

DESCRIPTION TheNX8563LBSeriesisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealforD-WDMtransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=10mWMIN. ?Wavelengthavailabilityλp=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    NX8

  • 制造商：

    CEL

  • 制造商全稱：

    CEL

  • 功能描述：

    NECs EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS

供應(yīng)商型號品牌批號封裝庫存備注價格
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價
更多NX8供應(yīng)商 更新時間2025-4-24 15:00:00

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