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PBRN123YT-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRP123ET

PNP800mA,40VBISSRET;R1=2.2kW,R2=2.2kW

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRP123ET

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRP123ET-Q

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRP123YT

PNP800mA,40VBISSRET;R1=2.2kW,R2=10kW

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRP123YT

40V,600mAPNPPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRP123YT-Q

40V,600mAPNPPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturatio

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PC123

DEVICESPECIFICATIONFORPHOTOCOUPLER

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

PC123

EuropeanSafetyStandardApprovedTypeLongCreepageDistancePhotocoupler

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

PC123A

DEVICESPECIFICATIONFORPHOTOCOUPLER

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

晶體管資料

  • 型號:

    OC123

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Ge-PNP

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    ACY24,ASY48,ASY77,3AX55C,

  • 最大耗散功率:

    0.2W

  • 放大倍數(shù):

  • 圖片代號:

    C-36

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.5

  • wtest:

    0.2

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更多OC123供應(yīng)商 更新時間2025-4-5 11:10:00