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BU4315G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BU4315G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BU4315G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

CRO4315A-LF

Voltage-ControlledOscillatorSurfaceMountModule

ZCOMM

Z-Communications, Inc

FJL4315

AudioPowerAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FJL4315

NPNEpitaxialSiliconTransistor

1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FJL4315

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=80V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):1.0V(Max)@IC=8A ·HighCurrentCapability ·HighPowerDissipation ·ComplementtoTypeFJL4215 APPLICATIONS ·High?FidelityAudioOutputAmplifier ·GeneralPurposePower

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FJL4315OTU

NPNEpitaxialSiliconTransistor

1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FJL4315OTU

NPNEpitaxialSiliconTransistor

Features ?HighCurrentCapability:IC=17A. ?HighPowerDissipation:150watts. ?HighFrequency:30MHz. ?HighVoltage:VCEO=250V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SA1943/FJL4215. ?ThermalandelectricalSpicemodelsareav

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FJL4315RTU

NPNEpitaxialSiliconTransistor

1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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OH霍爾
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