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RFD3055SM

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFP3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFP3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFP3055

12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs)

Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor

HARRIS

Harris Corporation

RFP3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFP3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFP3055LE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFT3055

2.0A,60V,0.150Ohm,N-Channel,LogicLevel,ESDRated,PowerMOSFET

ThisproductisanN-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulato

Intersil

Intersil Corporation

RFT3055LE

2.0A,60V,0.150Ohm,N-Channel,LogicLevel,ESDRated,PowerMOSFET

ThisproductisanN-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulato

Intersil

Intersil Corporation

RJP3055DPP

PowerMOSFETsandIGBTforPDP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    OL3055E-R52

  • 制造商：

    Ohmite

  • 類(lèi)別：

    電阻器 > 通孔式電阻器

  • 系列：

    Little Rebel? OL

  • 包裝：

    卷帶（TR）

  • 容差：

    ±5%

  • 功率 (W)：

    0.5W，1/2W

  • 成分：

    炭膜

  • 溫度系數(shù)：

    -800/ +1500ppm/°C

  • 封裝/外殼：

    軸向

  • 供應(yīng)商器件封裝：

    軸向

  • 大小 / 尺寸：

    0.118" 直徑 x 0.354" 長(zhǎng)（3.00mm x 9.00mm）

  • 描述：

    RES 3M OHM 5% 1/2W AXIAL

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
23+
DIP
20000
全新原裝假一賠十
 詢(xún)價(jià)
新
2439
全新原裝 貨期兩周
 詢(xún)價(jià)
2022+
2435
全新原裝 貨期兩周
 詢(xún)價(jià)
2017+
SMD
1585
只做原裝正品假一賠十!
 詢(xún)價(jià)
M/A-COM
24+
SMD
5000
M/A-COM專(zhuān)營(yíng)品牌絕對(duì)進(jìn)口原裝假一賠十
 詢(xún)價(jià)
OKI
13+
11258
原裝分銷(xiāo)
 詢(xún)價(jià)
SONY
2310+
5.6MM
21040
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢(xún)價(jià)
OKI原裝
25+23+
DIP-2
30580
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
OKI原裝
23+
DIP-2
46800
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
OKI
24+
DIP-2
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
更多OL3055供應(yīng)商 更新時(shí)間2025-4-8 9:46:00

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