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11033

PVCandNylonLEDSpacers

HeycoHeyco.

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IJ11033H

EMI/EMCFILTER

Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo

DIT

DONG IL TECHNOLOGY LTD.

IJ11033S

EMI/EMCFILTER

Features -Ideallysuitedforproductsthatmustconformtopart 15,FCCregulations -Metalcasedminiaturetypewithhighperformance -MeetovervoltagecategoryIIofIEC60664andcomply with[EC60950 -UsesIECconnectorthatmeetsthesafetystandards fromcertificationbodies -Bo

DIT

DONG IL TECHNOLOGY LTD.

L11033

LONGLIFEXENONLAMPSERIES

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學(xué)株式會(huì)社

MJ11033

COMPLEMENTARYDARLINGTONPOWERTRANSISTOR

FEATURES ?HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A ?CURVESTO100A(Pulsed) ?DIODEPROTECTIONTORATEDIC ?MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR ?JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

MJ11033

PNPSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

PNPSILICONDARLINGTONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

MJ11033

COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS

High?CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain?hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ11033

50AMPERECOMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS60.120VOLTS300WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A(Pulsed) ?

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJ11033

POWERTRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighGainDarlingtonPerformance ?HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJ11033

High-CurrentComplementarySiliconPowerTransistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc ?Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

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24+
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5000
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24+
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7500
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加我QQ或微信咨詢更多詳細(xì)信息,
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NA
50000
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NXP
23+
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13528
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NXP(恩智浦)
21+
6000
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23+
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7350
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