OPA4H014PWSEP中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

1 Features

? Radiation tolerant

– Single even latch-up (SEL) immune to 43

MeV?cm2/mg

– ELDRS free to 30 krad(Si)

– Total ionizing dose (TID) RLAT for every wafer

lot up to 30 krad(Si)

? Space enhanced plastic

– Au bondwire and NiPdAu lead finish

– Enhanced mold compound for low outgassing

– One fabrication, assembly, and test site

– Extended product life cycle

– Extended product change notification

– Product traceability

? Very-low offset drift: 1 μV/°C maximum

? Very-low offset: 120 μV

? Low input bias current: 10 pA maximum

? Low noise: 5.1 nV/√Hz

? Slew rate: 20 V/μs

? Low supply current: 2 mA maximum

? Input voltage range includes V– supply

? Wide supply range: 4.5 V to 18 V

2 Applications

? Satellite health monitoring and telemetry

? Scientific exploration payload

? Altitude and orbit control system (AOCS)

? Satellite electrical power system (EPS)

? Communications payload

? Radar imaging payload

3 Description

The OPA4H014-SEP is a low-power JFET input

operational amplifier (op amp) that features good

drift and low input bias current. With an input range

that includes V– and a rail-to-rail output, designers

can take advantage of the low-noise characteristics

of JFET amplifiers while interfacing to single-supply,

precision analog-to-digital converters (ADCs) and

digital-to-analog converters (DACs).

The OPA4H014-SEP achieves 11?MHz unity-gain

bandwidth and 20-V/μs slew rate, while consuming

only 1.8 mA (typical) of quiescent current. This device

runs on a single 4.5?V to 18?V supply or dual ±2.25?V

to ±9?V supplies.

The op amp is built in a plastic, 14?pin,

TSSOP package with radiation hardness up to

43 MeV?cm2/mg (SET) and is ELDRS free up to

30 krad(Si).