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MTH15N40

N-ChannelEnhancementModesiliconGateTMOS

TMOSPOWERFETs15AMPERES rDS(on)=0.3OHM350and400VOLTS N-ChannelEnhancementModesiliconGateTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTH15N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTIYI15N40

MaximumLeadTemp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MTM15N40E

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

NTB15N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NTB15N40

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTP15N40

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

SGR15N40L

GeneralDescription

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplicati

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGU15N40

GeneralDescription

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplicati

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGU15N40L

GeneralDescription

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplicati

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

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22+
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16900
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5000
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23+
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56688
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更多P15N40供應商 更新時間2025-4-15 8:40:00

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