PAM8904EJER

Marking：P8904E；Package：U-QFN3030-16；18VPP OUTPUT PIEZO SOUNDER DRIVER

Features SupplyVoltageRangefrom1.5Vto5.5V 18VPPOutputfroma3VSupply IntegratedBoostConverterGeneratesupto13.5VSupply InputSignal20Hzto300kHz NoVoltageCrossOutputinShutdownMode LowCurrentConsumption AutomaticStandbyandWake-upControl AvailableinSpaceSaving

PJP8NA65A_T0_00001

Marking：P8NA65A；Package：TO-220AB；650V N-Channel MOSFET

Features ?RDS(ON),VGS@10V,ID@3.75A

PTPLD801DRLR

Marking：P801；Package：SOT-5X3；TPLD801 Programmable Logic Device with 6-GPIO

1Features ?Operatingcharacteristics –Extendedtemperaturerange:-40°Cto125°C –Widesupplyvoltagerange:1.65Vto5.5V ?Configurablemacro-cells –2-,3-,and4-bitlookuptables –D-typeflip-flopsandlatcheswithandwithout reset/setoption –8-bitpipedelay –Countersandd

PTPLD801DRLRQ1

Marking：P801Q；Package：SOT-5X3；TPLD801-Q1 Automotive Programmable Logic Device with 6-GPIO

1Features ?Operatingcharacteristics –Extendedtemperaturerange:-40°Cto125°C –Widesupplyvoltagerange:1.65Vto5.5V –Qualifiedforautomotiveapplications ?Configurablemacro-cells –2-,3-,and4-bitlookuptables –D-typeflip-flopsandlatcheswithandwithout reset/setopt

STP80NF03L

Marking：P80NF03L；Package：TO-220；N-CHANNEL 30V - 0.004 - 80A TO-220 STripFET II MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemark

STP80NF10FP

Marking：P80NF10FP；Package：TO-220FP；N-channel 100V - 0.012? - 38A - TO-220FP Low gate charge STripFET? II Power MOSFET

Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFETprocesshas specificallybeendesignedtominimizeinput capacitanceandgatecharge.Itistherefore suitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecom andComputer

STP85NF55_V01

Marking：P85NF55；Package：TO-220；Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET? II Power MOSFETs in D2PAK and TO-220 packages

Features ?AEC-Q101qualified ?Exceptionaldv/dtcapability ?100avalanchetested ?Lowgatecharge Applications ?Switchingapplications Description ThesePowerMOSFETshavebeendevelopedusingSTMicroelectronics’unique STripFETprocess,whichisspecificallydesignedtominimize

STP8NM60

Marking：P8NM60；Package：TO-220；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

STP8NM60FP

Marking：P8NM60FP；Package：TO-220FP；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

TLP864

Marking：P864；Package：11-13K1；TOSHIBA PHOTO-INTERRUPTERS INFRARED LED PHOTODARLINGTON TRANSISTOR

VCRS,COMPACTDISCPLAYERS COPIERS,FAXMACHINES,PRINTERS VENDINGMACHINES,TICKETMACHINES VARIOUSPOSITIONDETECTIONSENSORS TheTLP864andTLP865photo-interrupterscombinesGaAsinfraredLEDwithahigh-sensitivitySiphotodarlingtontransistor.Theyexhibitahgihcurrenttransferratio,