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P80FG6EAL

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

P80FG7R5EN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.4mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

P80FH5ENK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

P80N55-08

N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P80NF06

N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P80NF10

N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersfortelecomandcomputerapp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P80NF10FP

N-channel 100V - 0.012? - 38A - TO-220FP Low gate charge STripFET? II Power MOSFET

Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFETprocesshas specificallybeendesignedtominimizeinput capacitanceandgatecharge.Itistherefore suitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecom andComputer

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P8006EDG

P-Channel Logic Level Enhancement

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

P8006EVG

P-Channel Logic Level Enhancement Mode Field Effect Transistor

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

P8008BD

Marking：DPAK；Package：TO-252；N-Channel Enhancement Mode MOSFET

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

詳細(xì)參數(shù)

  • 型號：

    P80

  • 制造商：

    ROEBUCK

  • 功能描述：

    RBK PAPER ROLL 115MMX10M P80

供應(yīng)商型號品牌批號封裝庫存備注價格
JST/日壓
2508+
/
343380
一級代理，原裝現(xiàn)貨
 詢價
MHS
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價
NXP/PHI
23+
PLCC
1000
進(jìn)口原裝現(xiàn)貨庫存,特價,只售原裝正品
 詢價
TEMIC
23+
DIP-40
5000
原裝正品,假一罰十
 詢價
Roches
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價
PHIL
24+/25+
410
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
NXP
2022+
DIP
7600
原廠原裝,假一罰十
 詢價
INTEL
2016+
DIP40
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
NIKOS
22+
TO-252
8900
英瑞芯只做原裝正品!!!
 詢價
INTEL
19+
DIP-40
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
更多P80供應(yīng)商 更新時間2025-4-5 16:26:00

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