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PBRN123E

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123E

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123E_SER

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123EK

Marking：G3；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ES

Marking：N123ES；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

Marking：7J；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

Marking：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET-Q

Marking：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123EK

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123ES

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    PBRN123E

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?, R2 = 2.2 k?

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NXP
24+
6000
詢價(jià)
Nexperia
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
Nexperia/安世
22+
SOT23
210000
原廠原裝正品現(xiàn)貨
 詢價(jià)
TI/德州儀器
23+
SOT-223
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
Nexperia(安世)
2447
SOT-23
115000
3000個(gè)/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價(jià)
NEXPERIA
1809+
SOT23-3
6675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
NEXPERIA/安世
23+
SOT23
6000
原裝正品假一罰百!可開增票!
 詢價(jià)
PHILIPS
23+
SOT23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
NXP
22+
NA
45000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
NXP/恩智浦
2021+
SOT-89
7600
原裝現(xiàn)貨，歡迎詢價(jià)
 詢價(jià)
更多PBRN123E供應(yīng)商 更新時(shí)間2025-4-26 15:30:00

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