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PBSS4350SPN

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS4350SPN

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4350SPN

Marking：4350SPN；Package：SO8；50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4350SPN_15

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4350SS

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS4350SS

50V,2.7ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4350SS

50V,2.7ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4350T

50V;3ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage.PNPcomplement:PBSS5350T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability ?Highcollectorcurrentgain ?Improvedefficiencyduetoreducedheatgene

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4350T

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4350T

50V;3ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage.PNPcomplement:PBSS5350T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability ?Highcollectorcurrentgain ?Improvedefficiencyduetoreducedheatgene

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    PBSS4350SPN

  • 功能描述：

    兩極晶體管 - BJT TRANS BISS TAPE-7

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
原裝
24+
標準
51785
熱賣原裝進口
 詢價
NXP(恩智浦)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
Nexperia
24+
NA
3728
進口原裝正品優(yōu)勢供應(yīng)
 詢價
NXP
23+
NA
373
專做原裝正品,假一罰百!
 詢價
NEXPERIA/安世
2447
SOT96
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
NXP(恩智浦)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持
 詢價
NEXPERIA/安世
23+
SOT96
6000
原裝正品假一罰百!可開增票!
 詢價
NEXPERIA/安世
2022+
1000
6600
只做原裝,假一罰十,長期供貨。
 詢價
NXP(恩智浦)
21+
6000
只做原裝正品,賣元器件不賺錢交個朋友
 詢價
NXP(恩智浦)
21+
SOP
10000
詢價
更多PBSS4350SPN供應(yīng)商 更新時間2025-2-23 14:14:00

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