PD55035STR1-E中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Features

? Common source configuration

? POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V

? New RF plastic package

Description

The device is a common source N-channel, enhancement-mode lateral field-effect

RF power transistor. It is designed for high gain, broad band commercial and

industrial applications. It operates at 12 V in common source mode at frequencies

of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true SMD plastic RF power package,

PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for

car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability,

is the first ST JEDEC approved, high power SMD package. It has been specially

optimized for RF needs and offers excellent RF performance and ease of assembly.