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PDTC123JT

Marking：25；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA123JT 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducesco

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123JT

PNP resistor-equipped transistors; R1 = 2.2 k?, R2 = 47 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123JT-Q

Marking：25；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA123JT 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducesco

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123JU

NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline, symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampli

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123JU

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PDTC123JU

Marking：49；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. PNPcomplement:PDTA123JU 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reduces

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123JU

PNP resistor-equipped transistors; R1 = 2.2 k?, R2 = 47 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123JU-Q

Marking：49；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. PNPcomplement:PDTA123JU 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reduces

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123JT

Low VCEsat (BISS) transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123JU

Low VCEsat (BISS) transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號：

    PDTC123J

  • 功能描述：

    開關晶體管 - 偏壓電阻器 TRANS RET TAPE-7

  • RoHS：

    否

  • 制造商：

    ON Semiconductor

  • 晶體管極性：

    NPN/PNP

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    直流集電極/Base Gain hfe

  • Min：

    200 mA

  • 最大工作頻率：

    集電極—發(fā)射極最大電壓

  • VCEO：

    50 V

  • 集電極連續(xù)電流：

    150 mA

  • 功率耗散：

    200 mW

  • 封裝：

    Reel

供應商型號品牌批號封裝庫存備注價格
PHILIPS
23+
SOT-23
12300
詢價
NXP
23+
SC-75-3
3200
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
NXP
2016+
SOT523
3678
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
PHILIPS
24+
5000
有部份現(xiàn)貨
 詢價
NXP
2020+
SOT23-3
2596
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
DISCRETE
3000
PH3
363000
詢價
NXP
16+
NA
8800
誠信經(jīng)營
 詢價
PHI
24+
SOT523
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
PHILIPS
24+
SOT883
5000
只做原裝公司現(xiàn)貨
 詢價
NXP
999999
提供BOM表配單只做原裝貨值得信賴
 詢價
更多PDTC123J供應商 更新時間2025-3-26 16:43:00

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