PESDNC3D5VB中文資料友臺半導體數(shù)據(jù)手冊PDF規(guī)格書

Description

The UMW PESDNC3D5VB protects sensitive

semiconductor components from damage or upset due

to electrostatic discharge (ESD) and other voltage

induced transient events. They feature large crosssectional

area junctions for conducting high transient

currents, offer desirable electrical characteristics for

board level protection, such as fast response time, low

operating voltage. It gives designer the flexibility to

protect one bi-directional line in applications where

arrays are not practical.

350W peak pulse power per line (tP=8/20μs)

SOD-323 package

Replacement for MLV(0805)

Bidirectional configurations

Protects one power or I/O port

Low clamping voltage

RoHS compliant

Feature

Applications

Laptop computers

Cellular phones

Digital cameras

PDAs