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PHB21N06T

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB21N06T

N-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHD21N06LT

N-channelTrenchMOS?transistorLogiclevelFET

FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- ?d.c.tod.c.converters ?swi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PHD21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP21N06

TrenchMOSOtransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconverters

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP21N06

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP21N06LT

N-channelTrenchMOS?transistorLogiclevelFET

FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- ?d.c.tod.c.converters ?swi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    PHB21N06T

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    TrenchMOS transistor Standard level FET

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP/恩智浦
24+
TO-263
504479
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
PH
24+
TO-263
2265
詢價
NXP
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
NXP
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
NXP
18+
TO-263
41200
原裝正品,現(xiàn)貨特價
 詢價
PH
24+
TO-220
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
PHILIPS
21+
TO-263
30490
原裝現(xiàn)貨庫存
 詢價
N
23+
SOT404
10000
公司只做原裝正品
 詢價
PHILIPS/飛利浦
2022+
SOT404(D2PAK)
6905
原廠代理 終端免費(fèi)提供樣品
 詢價
PHILIPS/飛利浦
23+
TO-263
125800
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多PHB21N06T供應(yīng)商 更新時間2025-2-13 16:39:00

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