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PLM74912QRGERQ1中文資料德州儀器數(shù)據(jù)手冊PDF規(guī)格書

PLM74912QRGERQ1
廠商型號

PLM74912QRGERQ1

功能描述

LM74912-Q1 Automotive Ideal Diode Controller With Overvoltage, Undervoltage, and Short Circuit Protection and Fault Output

文件大小

3.4999 Mbytes

頁面數(shù)量

33

生產(chǎn)廠商 Texas Instruments
企業(yè)簡稱

TI1德州儀器

中文名稱

德州儀器官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-15 20:02:00

PLM74912QRGERQ1規(guī)格書詳情

1 Features

? AEC-Q100 qualified for automotive applications

– Device temperature grade 1:

–40°C to +125°C ambient operating

temperature range

– Device HBM ESD classification level 2

– Device CDM ESD classification level C4B

? 3-V to 65-V input range

? Reverse input protection down to –65 V

? Drives external back-to-back N-channel MOSFETs

in common drain configuration

? Ideal diode operation with 10.5-mV A to C forward

voltage drop regulation

? Low reverse detection threshold (–10.5 mV) with

fast response (0.5 μs)

? 20-mA peak gate (DGATE) turn-on current

? 2.6-A peak DGATE turn-off current

? Adjustable overvoltage and undervoltage

protection

? Output short circuit protection with MOSFET

latched off state

? Ultra low power mode with 2.5-μA shutdown

current (EN=Low)

? SLEEP mode with 6-μA current (EN=High,

SLEEP=Low)

? Meets automotive ISO7637 transient requirements

with a suitable transient voltage suppressor (TVS)

diode

? Available in 4 mm × 4 mm 24-pin VQFN package

2 Applications

? Automotive battery protection

– ADAS domain controller

– Camera ECU

– Head unit

– USB HUBs

? Active ORing for redundant power

3 Description

The LM74912-Q1 ideal diode controller drives and

controls external back to back N-channel MOSFETs

to emulate an ideal diode rectifier with power path

ON/OFF control with overcurrent and overvoltage

protection. The wide input supply of 3 V to 65 V allows

protection and control of 12-V and 24-V automotive

battery powered ECUs. The device can withstand and

protect the loads from negative supply voltages down

to –65 V. An integrated ideal diode controller (DGATE)

drives the first MOSFET to replace a Schottky diode

for reverse input protection and output voltage holdup.

With a second MOSFET in the power path the

device allows load disconnect (ON/OFF control) in

case of overcurrent and overvoltage events using

HGATE control. The device has integrated current

sense amplifier which provides external MOSFET

VDS sense based short circuit protection with an

adjustable current limit. When short circuit condition

is detected on the output then device latches off the

load disconnect MOSFET. The device features an

adjustable overvoltage cut-off protection feature. The

device features a SLEEP mode which enables ultra

low quiescent current consumption (6 μA) and at the

same time providing refresh current to the always

ON loads when vehicle is in the parking state. The

LM74912-Q1 has a maximum voltage rating of 65 V.

供應商 型號 品牌 批號 封裝 庫存 備注 價格
TI
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