PSMN1R8-30MLH中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A

and optimizedwith low gate resistance (RG) for fast-switching applications.

2. Features and benefits

? Optimized for low RDSon and low gate resistance (RG)

? Fast switching – reduced switching losses

? Strong linear-mode (SOA) rating

? Low leakage < 1 μA at 25 °C

? Low spiking and ringing for low EMI designs

? Optimized for 4.5 V gate drive

? 150 A continuous ID(max) rating

? High reliability copper-clip bonded and solder die attach LFPAK33 package

? Qualified to 175 °C

? Exposed leads for optimal visual solder inspection

3. Applications

? Synchronous buck regulator

? Synchronous rectifier in AC-DC and DC-DC applications

? BLDC (brushless) motor control

? eFuse and battery protection