PSMN8R0-30YL中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

industrial and communications applications.

1.2 Features and benefits

High efficiency due to low switching

and conduction losses

Suitable for logic level gate drive

sources

1.3 Applications

Class-D amplifiers

DC-to-DC converters

Motor control

Server power supplies