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TPC8119

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TPC8119

FieldEffectTransistorSiliconPChannelMOSType(U-MOSV)

Lithium-IonBatteryApplications LoadswitchApplications NotebookPCApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=10m?(typ.) ?Highforwardtransferadmittance:|Yfs|=24S(typ.) ?Lowleakagecurrent:IDSS

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

UPC8119T

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Recommendedoperatingfrequency:f=100MHzto1.92GHz ?Supplyvoltage:VCC=2.7to3.3V ?Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V ?Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) ?Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC8119T

-15dBmINPUT,VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE

DESCRIPTION TheμPC8130TAandμPC8131TAaresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto800MHzto1.5GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.TheseICsarelowerdistortionthanconventionalμPC8119T

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC8119T

VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE

DESCRIPTION TheμPC8119TandμPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC8119T

NECsVARIABLEGAINAMPLIFIER

CEL

California Eastern Labs

UPC8119T

1.9GHzAGCAMPLIFIER

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UTC8119

LINERINTERFRATEDCIRCUIT

UTCUnisonic Technologies

友順友順科技股份有限公司

UZ8119

POWERZENERS

DESCRIPTION Onewattzenerdiodes,hermeticallysealedinglass. FEATURES ?HighSurgeRatings ?AQuartertheSizeofConventional1WattZeners ?ImpervioustoMoisture

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UZ8119

POWERZENERS

DESCRIPTION Onewattzenerdiodes,hermeticallysealedinglass. FEATURES ?HighSurgeRatings ?AQuartertheSizeofConventional1WattZeners ?ImpervioustoMoisture

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
MITSUMI
23+
SOT-25
165565010
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MITSUMI
1923+
原廠封裝
35689
絕對進口原裝現(xiàn)貨庫存特價銷售
 詢價
MITSUM
24+
QFN
48650
誠信經(jīng)營原裝現(xiàn)貨
 詢價
MITSUMI
16+
SOT143
15000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
MITSUMI
23+
SOT143
15000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
MITSUMI
24+
SOT143
5000
全新原裝正品,現(xiàn)貨銷售
 詢價
MITSUMI
22+23+
SOT143
8000
新到現(xiàn)貨，只做原裝進口
 詢價
MITSUMI
20+
SOT143
15000
進口原裝現(xiàn)貨,假一賠十
 詢價
MITSUMI
24+
SOT143
12000
原裝
 詢價
博賽半導體
24+
DFN3x3-12
25401
原裝正品現(xiàn)貨供應(yīng)
 詢價
更多PST8119NR供應(yīng)商 更新時間2025-5-4 11:10:00

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